High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
| Autor: | V P Konyaev, V V Krichevskii, Evgeniya I Davydova, V. A. Simakov, A A Padalitsa, M. V. Zverkov, Maxim A. Ladugin, A V Sukharev, Aleksandr A Marmalyuk, Mikhail B Uspenskii |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Laser diode business.industry Far-infrared laser Physics::Optics Statistical and Nonlinear Physics Optical power Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory Condensed Matter::Materials Science law Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | Quantum Electronics. 39:723-726 |
| ISSN: | 1468-4799 1063-7818 |
| Popis: | Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt—ampere characteristic for a triple laser diode is 2.6 W A-1. The frequency characteristics and temperature dependences of the optical power on the pump power demonstrate good homogeneity of the grown structures. Laser diodes based on the triple laser heterostructure (the stripe contact width is 200 μm and the cavity length is 1 mm) emit 80 W at 0.9 μm in the pulsed regime at the injection current of 40 A. |
| Databáze: | OpenAIRE |
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