Tests of UFXC32k chip with CdTe pixel detector
| Autor: | Piotr Maj, T. Taguchi, Yasukazu Nakaye |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors 010308 nuclear & particles physics business.industry chemistry.chemical_element Electron Cdte detector Chip 01 natural sciences Cadmium telluride photovoltaics Dot pitch chemistry 0103 physical sciences Optoelectronics 010306 general physics business Instrumentation Mathematical Physics Leakage (electronics) Pixel detector |
| Zdroj: | Journal of Instrumentation. 13:C02014-C02014 |
| ISSN: | 1748-0221 |
| Popis: | The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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