NBTI stress on power VDMOS transistors under low magnetic field
| Autor: | Nadia Saoula, Mohamed Marah, Boualem Djezzar, Hakim Tahi, Mohamed Boubaaya, Cherifa Tahanout, Becharia Nadji |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Negative-bias temperature instability business.industry Transistor Analytical chemistry Oxide Magnetic field law.invention Power (physics) Stress (mechanics) Trap (computing) chemistry.chemical_compound chemistry law Low magnetic field Physics::Accelerator Physics Optoelectronics business |
| Zdroj: | 2015 IEEE International Integrated Reliability Workshop (IIRW). |
| Popis: | In this paper, we investigated the magnetic field impact on negative bias temperature instability (NBTI) of commercial power double diffused MOS transistor (VDMOS), using the charge pumping method (CP). We reported that both NBTI induce -interface and- oxide traps are reduced by applying the magnetic field. However, the dynamic of interface trap during the recovery phase is not affected. While, the recovery of oxide trap is accelerated by applied magnetic field. |
| Databáze: | OpenAIRE |
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