A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique

Autor:	Tran Thi Thu Huong, Vo Quang Son, Bui Quoc Doanh, Luong Duy Manh
Rok vydání:	2020
Předmět:	business.industry Computer science Amplifier Transistor Electrical engineering High-electron-mobility transistor Power degradation law.invention Hardware_GENERAL Power consumption law Performance comparison Hardware_INTEGRATEDCIRCUITS Wireless business
Zdroj:	Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering ISBN: 9783030630829 INISCOM
DOI:	10.1007/978-3-030-63083-6_8
Popis:	A design of 3-stacked GaN high-electron-mobility transistor radio-frequency power amplifier using independently biased technique is presented. The power amplifier operates at 1.6 GHz for wireless communications applications. By independently setting proper bias conditions, DC power consumption of the power amplifier can be reduced leading to efficiency enhancement without output power degradation. A performance comparison of the proposed power amplifier with a conventional 3-stacked power amplifier has been performed. The simulated results indicate that the proposed power amplifier offers superior efficiency over the conventional one.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0126dd550479981b66f7ccaa1f37e3d6 https://doi.org/10.1007/978-3-030-63083-6_8 Zobrazit plný text záznamu