Electrical Transport Mechanisms in p+a-SiC:H/n c-Si Heterojunctions: dark J-V-T Characteristics

Autor: M. W. H. Philippens, M. Kolter, M. W. M. van Cleef, F. A. Rubinelli, Ruud E. I. Schropp
Rok vydání: 1996
Předmět:
Zdroj: MRS Proceedings. 420
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-420-239
Popis: In the present paper we show results of dark current-voltage measurements performed on p+ a- SiC:H/n c-Si heterojunction diodes at various temperatures (100–400K). We investigated the voltage derivative of these J-V curves in order to the distinguish possible current transport mechanisms. It was found that for low temperatures (300 K), by a tunnelling mechanism. At room temperature, both mechanisms contribute to the current. By using an equivalent circuit model and detailed numerical simulations we have interpreted our experimental characteristics. The simulations done at room temperature, show that at low forward bias voltage the current is controlled by recombination in the crystalline silicon and that at high forward bias voltage by a combination of multi-step tunnelling and a-SiC:H series resistance. For interface state densities equal to or higher than 1012 cm−2, the recombination was found to be dominated by the states at the amorphous-crystalline silicon interface.
Databáze: OpenAIRE
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