Auger analysis and simulation of electronic states for Ge33As12Se55p-Si heterojunction
| Autor: | A. Kondrat, N. D. Savchenko, T. N. Shchurova, I. I. Opachko |
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| Rok vydání: | 2006 |
| Předmět: |
Auger electron spectroscopy
Condensed matter physics Chemistry Heterojunction Surfaces and Interfaces General Chemistry Electronic structure Condensed Matter Physics Surfaces Coatings and Films Crystal Pseudopotential Linear combination of atomic orbitals Band diagram Materials Chemistry Energy level Atomic physics |
| Zdroj: | Surface and Interface Analysis. 38:448-451 |
| ISSN: | 1096-9918 0142-2421 |
| Popis: | We present experimental data on Auger analysis of the amorphous Ge33As12Se55 filmp-Si crystal heterojunction. The investigated depth profiles of the chemical components at the interface for the heterojunction revealed the presence of GeO2 and As2O3 from the film side and SiO2 from the crystal side in the interfacial region. The energy level diagram of the heterojunction was constructed on the basis of linear combination of atomic orbitals method and pseudopotential. Comparison of the results of simulation with experimental data shows applicability of the suggested theoretical approach to the computation of the energy band diagram of amorphous–crystalline heterojunctions taking into account the presence of electronic states at the interface. Copyright © 2006 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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