Current instability in field-effect transistors: influence of magnetic field and collisions
| Autor: | M S Kushwaha, P Vasilopoulos |
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| Rok vydání: | 2001 |
| Předmět: | |
| Zdroj: | Journal of Physics: Condensed Matter. 13:10105-10116 |
| ISSN: | 1361-648X 0953-8984 |
| DOI: | 10.1088/0953-8984/13/44/321 |
| Popis: | A theoretical investigation is made of the plasma-wave instability mechanism in a two-dimensional (2D) electron fluid in a field-effect transistor (FET) in the presence of a perpendicular magnetic field. The influence of electron collisions with impurities and/or phonons is also taken into account. The 2D electron fluid in the FET channel is treated within the framework of hydrodynamics. The treatment is valid for a nondegenerate electron fluid in which the mean free path for interelectronic collisions is much smaller than the device length and the mean free path due to impurities and/or phonons. It is shown that a relatively low direct current should be unstable because of magnetoplasma-wave amplification due to the reflection of the wave from the device boundaries. The role of an applied magnetic field is additive: the greater the magnetic field, the larger the wave increment. In that sense an applied magnetic field may be used to compensate (or overcome) the subtractive role played by collisions on plasma-wave generation. Such a ballistic FET is promising for the generation of tunable electromagnetic radiation in the terahertz frequency range. |
| Databáze: | OpenAIRE |
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