Total dose hardness of bonded SOI wafers
| Autor: | W.P. Maszara, J.B. McKitterick, A. Caviglia |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Nuclear and High Energy Physics
Fabrication Materials science Wafer bonding Oxide Silicon on insulator Radiation chemistry.chemical_compound Nuclear Energy and Engineering chemistry Radiation damage Electronic engineering Field-effect transistor Wafer Electrical and Electronic Engineering Composite material |
| Zdroj: | IEEE Transactions on Nuclear Science. 39:2098-2102 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.211408 |
| Popis: | The response of the buried oxide in bonded and etched-back silicon-on-insulator (SOI) wafers to radiation doses up to 2 Mrad(Si) was measured. The results indicate that the hardness of the buried oxide can be very good, at least that of a good thermally grown oxide, with only small effects from the bond. The amount of charge created in the buried oxide was independent of the thickness of the buried oxide. The buried oxide can easily be made hard enough to prevent back-channel turn-on in nonfully-depleted FETs at doses of at least 2 Mrad(Si). > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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