GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION
| Autor: | J. Bude, S. Halder, K.K. Ng, B. Yang, Peide D. Ye, G. D. Wilk, J. C. M. Hwang |
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| Rok vydání: | 2004 |
| Předmět: |
Electron mobility
Materials science Passivation business.industry Gate dielectric Induced high electron mobility transistor High-electron-mobility transistor Electronic Optical and Magnetic Materials Atomic layer deposition Hardware and Architecture Gate oxide Electronic engineering Optoelectronics Electrical and Electronic Engineering business High-κ dielectric |
| Zdroj: | International Journal of High Speed Electronics and Systems. 14:791-796 |
| ISSN: | 1793-6438 0129-1564 |
| Popis: | We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al 2 O 3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al 2 O 3 as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al 2 O 3/ AlGaN interface with low interface trap density. The Al 2 O 3 passivation effect is also studied by sheet resistance measurement and short pulse drain characterization. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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