Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization
| Autor: | Andrey G. Kazanskii, O. I. Konkov, Andrey V. Emelyanov, Pavel K. Kashkarov, V. L. Lyaskovskii, Pavel A. Forsh, Nikolay Kutuzov, Mark V. Khenkin |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Analytical chemistry Physics::Optics chemistry.chemical_element Laser Fluence law.invention Amorphous solid Condensed Matter::Materials Science symbols.namesake chemistry law Condensed Matter::Superconductivity Femtosecond Volume fraction symbols Physics::Atomic Physics Crystallization Raman spectroscopy |
| Zdroj: | Technical Physics Letters. 40:141-144 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785014020217 |
| Popis: | We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm2. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation. |
| Databáze: | OpenAIRE |
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