4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
| Autor: | Shuhei Mitani, Kazuhiro Tsuruta, Toshimasa Yamamoto, Aiko Ichimura, Yuichi Takeuchi, Yasuhiro Ebihara, Masato Noborio, Shoji Mizuno |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Trench mosfet business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences On resistance law.invention Mechanics of Materials law 0103 physical sciences Miniaturization Optoelectronics General Materials Science Photolithography 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:707-710 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.707 |
| Popis: | The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a miniaturized Deep-P pattern have been optimized. The fabricated MOSFETs with ODS have demonstrated a low on-resistance of 2 mΩcm2 and a high breakdown voltage of 1.8 kV. |
| Databáze: | OpenAIRE |
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