Laterally driven accelerometer fabricated in single crystalline silicon

Autor: O. Lüdtke, Josef Binder, Volker Biefeld, A. Buhrdorf
Rok vydání: 2000
Předmět:
Zdroj: Sensors and Actuators A: Physical. 82:149-154
ISSN: 0924-4247
DOI: 10.1016/s0924-4247(99)00328-3
Popis: The request for wireless sensor operations grows in medical and automotive applications. These sensors receive their energy and send their data by a telemetric unit. The wireless transferred energy restricts the power consumption of the sensor and signal processing to less than 3 mW. Therefore, the sensor has to be operated in open-loop. Furthermore, a main focus is directed to increase the sensitivity of the mechanical–electrical transducer. Considering both open-loop and sensitivity, the sensor has to be optimized by referring to the structure height. The way for realizing high structures, as described in this paper, is the micromachining of silicon wafers with a specified thickness. The superior mechanical properties of single crystalline silicon compared to electroplated metals or surface-micromachined devices confirm the use of silicon as sensor material. A laterally driven accelerometer is simulated, designed and fabricated comprising the technologies of deep reactive ion etching (DRIE) of silicon, silicon direct bonding (SDB) and chemical mechanical polishing (CMP). Characterization results confirm the performance of this new technology. The open-loop sensor, which was characterized, had a height of 50 μm with damping constant greater than 0.1.
Databáze: OpenAIRE