Numerical simulation of nanoparticle-generating electronegative plasmas in the PECVD of nanostructured silicon film
| Autor: | Ken Ostrikov, Shuyan Xu, P.P. Rutkevych, Igor Denysenko |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
General Computer Science Silicon business.industry Analytical chemistry General Physics and Astronomy Nanoparticle chemistry.chemical_element General Chemistry Plasma Silane Ion Computational Mathematics chemistry.chemical_compound chemistry Mechanics of Materials Plasma-enhanced chemical vapor deposition Optoelectronics Electron temperature General Materials Science Thin film business |
| Zdroj: | Computational Materials Science. 30:303-307 |
| ISSN: | 0927-0256 |
| Popis: | The results of numerical simulation of the equilibrium parameters of a low pressure nanopowder-generating discharge in silane for the plasma enhanced chemical vapor deposition (PECVD) of nanostructured silicon-based films are presented. It is shown that a low electron temperature and a low density of negative SiH 3 − ions are favorable for the PECVD process. This opens a possibility to predict the main parameters of the reactive plasma and plasma-nucleated nanoparticles, and hence, to control the quality of silicon nanofilms. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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