Imprint lithography with sub-10 nm feature size and high throughput
| Autor: | Stephen Y. Chou, Peter R. Krauss |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Extreme ultraviolet lithography Photodetector Nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nanoimprint lithography law.invention law Multiple patterning Optoelectronics X-ray lithography Electrical and Electronic Engineering business Lithography Next-generation lithography Immersion lithography |
| Zdroj: | Microelectronic Engineering. 35:237-240 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(96)00097-4 |
| Popis: | Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been developed and investigated. Nanoimprint lithography has demonstrated 10 nm feature size, 40 nm pitch, vertical and smooth sidewalls, and nearly 90° corners. Further experimental study indicates that the ultimate resolution of nanoimprint lithography could be sub-10 nm, the imprint process is repeatable, and the mold is durable. In addition, uniformity over a 15 mm by 18 mm area was demonstrated and the uniformity area can be much larger if a better designed press is used. Nanoimprint lithography over a non-flat surface has also been achieved. Finally, nanoimprint lithography has been successfully used for fabricating nanoscale photodetectors, silicon quantum-dot, quantum-wire, and ring transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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