Polyelectrolyte multilayer-assisted fabrication of p-Cu2S/n-CdS heterostructured thin-film phototransistors

Autor:	Rajaram S. Mane, Anil V. Ghule, Ramphal Sharma, Gangri Cai, Shaheed U. Shaikh, Supriya A. Patil, Dipak V. Shinde, Sung-Hwan Han
Rok vydání:	2014
Předmět:	Photocurrent Materials science Fabrication Ion exchange business.industry Nanotechnology Heterojunction General Chemistry Polyelectrolyte Materials Chemistry Optoelectronics Thin film Cyclic voltammetry business Layer (electronics)
Zdroj:	J. Mater. Chem. C. 2:8012-8017
ISSN:	2050-7534 2050-7526
DOI:	10.1039/c4tc01428f
Popis:	We demonstrate meticulous fabrication of p-Cu2S/n-CdS heterojunction thin films using a facile wet-chemical approach. Ion exchange of Cu+ with Cd2+ is a serious problem during preparation of Cu2S/CdS multilayered thin films. This issue was addressed by employing polyelectrolyte multilayers on the CdS surface, which completely prevented CdS corrosion, thereby allowing fabrication of heterostructured Cu2S/CdS films. The formation of polyelectrolyte multilayers is monitored using cyclic voltammetry. The heterostructured films are characterized by structure and morphology. We further employed these films as modified p-channel, p-Cu2S/n-CdS thin-film phototransistors, where n-CdS acts as the electron transporting and hole-blocking layer that extracts and grounds the photogenerated electrons. This device exhibited a significant increase in photocurrent density (>75 times), drift mobility (>87 times), and good linearity without having to apply gate voltage, when compared to its individual component device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::00a2310f1ea521eee01e18d611fff5b6 https://doi.org/10.1039/c4tc01428f Zobrazit plný text záznamu