Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Autor:	Kunikaza Izumi, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Hidekazu Tsuchida, Tamotsu Jikimoto
Rok vydání:	2005
Předmět:	Materials science Annealing (metallurgy) business.industry Mechanical Engineering Schottky barrier Electrical engineering Schottky diode High voltage Condensed Matter Physics On resistance Mechanics of Materials Optoelectronics Electrical performance General Materials Science business Diode
Zdroj:	Materials Science Forum. :721-724
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.483-485.721
Popis:	We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.
Databáze:	OpenAIRE
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