Plasma heating in highly excited GaN/AlGaN multiple quantum wells

Autor:	Jingyu Lin, Hadis Morkoç, A. Botchkarev, Hongxing Jiang, W.W. Chow, R. A. Mair, K. C. Zeng
Rok vydání:	1998
Předmět:	Condensed Matter::Materials Science Materials science Photoluminescence Physics and Astronomy (miscellaneous) Excited state Heterojunction Atomic physics Microscopic theory Spectroscopy Lasing threshold Quantum well Semiconductor laser theory
Zdroj:	Applied Physics Letters. 73:2476-2478
ISSN:	1077-3118 0003-6951
Popis:	Time-resolved photoluminescence (PL) spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well (MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperature PL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0090af3dda4ac37e3575e9f34bb9f8a1 https://doi.org/10.1063/1.122487 Zobrazit plný text záznamu