Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement
| Autor: | Chao-Hsin Chien, Chao-Ting Lin, Yen Teng Ho, Chi-Feng Li, Yun-Yan Chung |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Two step Transmission line measurement chemistry.chemical_element Conductivity Edge (geometry) 01 natural sciences Electronic Optical and Magnetic Materials Nb doped chemistry Molybdenum Electrical resistivity and conductivity 0103 physical sciences Electrical and Electronic Engineering Order of magnitude |
| Zdroj: | IEEE Electron Device Letters. 40:1662-1665 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2019.2935538 |
| Popis: | This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, $\rho _{C\_{}{\textit {edge}}}$ , was almost two orders of magnitude lower than the top contact resistivity, $\rho _{C\_{}{\textit {top}}}$ . Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|