Circular geometry mos transistor analysis of SOI substrates for high energy physics particle detectors

Autor:	P. P. Allport, Gianluigi Casse, J.H. Montgomery, T. J. V. Bowcock, Harold Gamble, Suli Suder, B.M. Armstrong, F.H. Ruddell
Rok vydání:	2008
Předmět:	Particle physics Materials science Fabrication Silicon business.industry Transistor chemistry.chemical_element Silicon on insulator Geometry Particle detector Ion law.invention chemistry law Nuclear electronics MOSFET Optoelectronics business
Zdroj:	2008 IEEE International Conference on Microelectronic Test Structures.
DOI:	10.1109/icmts.2008.4509322
Popis:	SOI substrates are important for the fabrication of monolithic active pixel high energy physics particle detectors. In this work, self-aligned circular geometry MOS transistor test structures were fabricated on ion split, bonded SOI substrates to evaluate the interface between the high resistivity handle silicon and the SOI buried oxide. Pre- and post- proton irradiation transistor measurements are presented, showing an increased SOI buried oxide trapped charge of only 3.45times1011 cm-2 for a dose of 2.7 Mrad.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::007112e1e4c8fbce10746ecf477d76c0 https://doi.org/10.1109/icmts.2008.4509322 Zobrazit plný text záznamu