Engeln-Müllges, G.; Reutter, F., Formelsammlung zur Numerischen Mathematik mit BASIC-Programmen. 2., überarb. und erw. Auflage. Mannheim etc., Bibliographisches Institut 1985. XV, 430 S., DM 34,—. ISBN 3-411-03100-X

Autor: P.K. Ko, Chenming Hu, T.-C. Ong
Rok vydání: 1988
Předmět:
Zdroj: ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik. 68:636-636
ISSN: 1521-4001
0044-2267
DOI: 10.1002/zamm.19880681213
Popis: While hot-carrier-induced degradation is aggravated at cryogenic temperature, a very thin gate-oxide (52-A) device can still tolerate a 3-V power-supply voltage at 77 K. Hot-carrier-induced degradation may not be the limiting factor in choosing the power-supply voltage and special drain structures may be necessary for very thin gate MOSFET's even at 77 K. However, mobility reduction at high V G is more severe both at lower temperatures and for thinner oxides. Electron mobility appears to be oxide-thickness-dependent at 77 K. The dependence of the electron mobility on the normal field is so strong that it results in unusual I-V characteristics such as negative transconductance at 77 K for an oxide field above 3 MV/cm. The I--V characteristics have been modeled with a mobility dependence on V GS of the form µn ∞ (1 + η(V GS - V t /T ox )2+ (E/E c ))-1for 52-A devices.
Databáze: OpenAIRE
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