Contact Extensions Over a High-k Dielectric Layer for Surface Field Mitigation in High Power 4H-SiC Photoconductive Switches
| Autor: | James C. Dickens, Animesh R. Chowdhury, Ravi P. Joshi, Andreas A. Neuber, Daniel Mauch |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Field (physics) business.industry Gallium nitride Dielectric Laser 01 natural sciences 010305 fluids & plasmas Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Electric field 0103 physical sciences Silicon carbide Optoelectronics Electric potential Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. :1-6 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2577547 |
| Popis: | We focus on a simulation study to probe the mitigation of electric fields, especially at the edges of metal contacts to SiC-based photoconductive switches. Field reduction becomes germane given that field-induced failures near contacts have been reported. A dual strategy of extending metal contacts to effectively spread the electric field over a larger distance and to employ HfO2 as a high- ${k}$ dielectric, is discussed. Simulation results show that peak electric fields can be lowered by up to $\sim 67$ % relative to a standard design. Finally, our calculations predict that the internal temperature rise for a $\sim 7$ -ns laser pulse and applied voltages around 20 kV (typical experimental values) would also be effectively controlled. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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