Performance evaluation of CMOS ring-oscillators with source/drain regions fabricated by asymmetric/symmetric ion-implantation

Autor:	Toshihiro Matsuda, Shinji Odanaka, T. Ohzone, T. Miyakawa, Toshiki Yabu
Rok vydání:	2002
Předmět:	Ion implantation Materials science CMOS business.industry Circuit performance media_common.quotation_subject Electrical engineering Optoelectronics Substrate (electronics) business Ring (chemistry) Asymmetry media_common
Zdroj:	1997 IEEE International Conference on Microelectronic Test Structures Proceedings.
DOI:	10.1109/icmts.1997.589356
Popis:	0.5 /spl mu/m CMOS ring-oscillators with LDD-type surface-channel n-MOSFETs and EPS-type buried-channel p-MOSFETs with asymmetric/symmetric source/drain fabricated by four kinds of ion-implantation methods were measured for evaluating the circuit performance. The ion-implantation methods were correlated to supply-current/oscillation-frequency/delay-power product and substrate current of the ring-oscillator. The most preferable implantation method was the symmetric 7/spl deg//spl times/4-implantation in terms of circuit performance, asymmetry/mismatch and punchthrough immunity of CMOSFET.
Databáze:	OpenAIRE
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