Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
| Autor: | E. A. Vavilova, I. O. Maiboroda, M. L. Zanaveskin, I. S. Ezubchenko, A. A. Andreev |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Electron concentration Algan gan Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Electron diffraction law 0103 physical sciences Optoelectronics Polar 0210 nano-technology business Fermi gas Layer (electronics) |
| Zdroj: | Technical Physics. 62:1288-1291 |
| ISSN: | 1090-6525 1063-7842 |
| Popis: | The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited in situ at 550°C do not exhibit polar properties and do not change the carrier concentration in the 2DEG. However, GaN layers deposited at 830°C decrease the carrier concentration in the 2DEG, which is in agreement with theoretical calculations. Using the reflected high-energy electron diffraction technique, it has been established that this effect may be associated with different structures and morphologies of GaN layers deposited at different temperatures. |
| Databáze: | OpenAIRE |
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