Low temperature synthesis of Ge nanocrystals in SiO2

Autor:	Ian W. Boyd, Valentin Craciun, Dirk E. W. Vandenhoudt, Alec H. Reader
Rok vydání:	1994
Předmět:	Nanostructure Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Nanotechnology Germanium medicine.disease_cause chemistry Nanocrystal medicine Optoelectronics Microelectronics business Ultraviolet radiation Ultraviolet
Zdroj:	Applied Physics Letters. 65:3233-3235
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112422
Popis:	A novel and simple technique for the synthesis of Ge nanocrystals embedded in SiO2 is reported. The method is fully compatible with silicon microelectronic technology and relies solely upon low temperature (only 550 °C) ultraviolet oxidation of Si0.8Ge0.2 strained layers. This temperature is significantly lower than that usually used for the formation of Ge nanocrystals from SiGe oxides by H2 reduction.
Databáze:	OpenAIRE
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