Simple, fast, 2.5-V CMOS logic with 0.25-μm channel lengths and damascene interconnect

Autor:	J. Lee, Heon Lee, Charles W. Koburger, H. Hansen, S. Luce, J. Givens, William F. Clark, S. Holmes, Bijan Davari, D. Martin, S. Geissler, S. Mittl, J. Nakos, Scott R. Stiffler, James W. Adkisson
Rok vydání:	2002
Předmět:	Interconnection Materials science business.industry Electrical engineering Copper interconnect Hardware_PERFORMANCEANDRELIABILITY Nitride CMOS Etching (microfabrication) Chemical-mechanical planarization Hardware_INTEGRATEDCIRCUITS Static random-access memory business Voltage
Zdroj:	Proceedings of 1994 VLSI Technology Symposium.
DOI:	10.1109/vlsit.1994.324443
Popis:	An advanced half-micron CMOS technology is demonstrated. Devices with 0.25-/spl mu/m channel lengths provide high speed. Reduced supply voltage is employed to provide reliability with low-cost processing. A damascene tungsten interconnect fabricated using a nitride etch stop allows use of 30-/spl mu/m/sup 2/ SRAM cells. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::002171d17a81645f82f20333bc87e236 https://doi.org/10.1109/vlsit.1994.324443 Zobrazit plný text záznamu