Single crystal monolayer MoS2 triangles with wafer-scale spatial uniformity by MoO3 pre-deposited chemical vapor deposition

Autor: Ruixue Hu, Zhaofang Cheng, Minggang Xia, Gongying Liang, Chunping Liang, Shengli Zhang
Rok vydání: 2017
Předmět:
Zdroj: Journal of Crystal Growth. 480:6-12
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.024
Popis: Two-dimensional transition metal dichalcogenides (TMDs) show a potential application in photoelectric device due to their excellent electrical and optical properties. Here, we report that the MoO 3 pre-deposited chemical vapor deposition (CVD) is used to synthesize single crystal monolayer MoS 2 triangles on 4 in. wafer. We found that the wafer-scale uniformity of MoS 2 can be greatly improved by regularly depositing MoO 3 particles on substrate before CVD growth. Therefore, a piece of cleanroom wiper was used as a template for implementing precise control of MoO 3 pre-deposition. We found that the optimal deposition size of MoO 3 particles and the distance between MoO 3 particles are about 15 μm and 0.9 mm, respectively. Both microscopic and spectroscopic characterization results demonstrate that the as-grown MoS 2 is highly uniform in space distribution and crystal structure. The electronic performance of MoS 2 synthesized by our method is comparable to or even slightly better than those in common CVD samples. The role of MoO 3 pre-deposition is not only to effectively control the MoS 2 nucleation density but also to overcome poor diffusion of MoO 3 source. Our method is expected to accelerate the industrial synthesis of the atomically thin TMD materials.
Databáze: OpenAIRE
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