| Autor: |
Shao-Ming Yang, Ankit Kumar, V. N. Vasantha Kumar, Aryadeep Mrinal, Vivek Ningaraju, Emita Yulia Hapsari, Gene Sheu |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC). |
| DOI: |
10.1109/nmdc.2013.6707459 |
| Popis: |
In this work, a single RESURF P-top layer with STI-sided N-LDMOS device is developed to realize a breakdown voltage of 20V-60V with lowest on-resistance and good charge balance which is demonstrated by using three-dimensional Sentaurus process and device simulators. By tuning not only the doping concentration in substrate, N-drift and P-top layer regions, but also the width ratio of N-drift region divided by STI one (WN-drift/WSTI), a low specific on-resistance while maintaining a high breakdown voltage can be achieved successfully in this work. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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