Nitrogenated amorphous InGaZnO thin film transistor

Autor:	Li Feng Teng, Fu Hai Li, Han Ping Shieh, Yi Teh Chou, Po-Tsun Liu
Rok vydání:	2011
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Sputter deposition Oxide thin-film transistor law.invention Threshold voltage Amorphous solid law Thin-film transistor Optoelectronics Thin film business
Zdroj:	Applied Physics Letters. 98:052102
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3551537
Popis:	This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0001479c472c5332d3ffdf05165ee32b https://doi.org/10.1063/1.3551537 Zobrazit plný text záznamu