| Autor: |
O. I. Velichko, V. V. Aksenov |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 20-24 (2019) |
| ISSN: |
1729-7648 |
| Popis: |
The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equations. Calculation of the typical distribution of point defects in the 2-layer structure was carried out. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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