Towards Reliable 10 mu m Pitch Assembly Using Cu/Ni/SnAg based Interconnects
| Autor: | Taneja, D., Volpertl, M., Mendizabal, L., Chaira, T., Henry, D., Hodaj, F. |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | 2017 IEEE 19TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC) 2017 IEEE 19TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2017, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region |
| Popis: | 19th IEEE Electronics Packaging Technology Conference (EPTC), Singapore, SINGAPORE, DEC 06-09, 2017; International audience; In this paper, the interconnect for 10 mu m are evaluated. Two processes for obtaining interconnects for 10 mu m pitch are compared in terms of reliability. One process yields the interconnects with Ni3Sn4 intermetallic (IMC) joint (interconnect A) while other yields the interconnects with solder joint (interconnect B). To select the best process for the assembly at 10gim pitch, high temperature storage tests are performed at 150 degrees C, 175 degrees C and 200 degrees C for 500hrs. The evolution of the metallurgy for both the interconnects is evaluated. The failure mechanism is determined by measuring the change in resistance. On the basis of mechanism, failure statistic is made. Finally, the obtained results are discussed. |
| Databáze: | OpenAIRE |
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