Resistive Switching of SrIrO3 thin films in the vicinity of a Metal Insulator Transition
| Autor: | Fuentes, Víctor, Vasić, Borislav, Konstantinović, Z., Balcells, Lluis, Martínez Perea, Benjamín, Pomar, Alberto |
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| Rok vydání: | 2019 |
| Zdroj: | Digital.CSIC. Repositorio Institucional del CSIC instname |
| Popis: | The relation between Metal Insulator Transitions (MIT) and Resistive Switching (RS) is important from the fundamental point of view, but also highly relevant because of the possible applications of RS based devices in non-volatile memories [1]. We studied RS of 5d SrIrO3 thin films in the vicinity of a MIT triggered by the reduction of thickness [2]. RS was studied for two characteristic cases: 1. in a thick film which behaves like a semimetal, and 2. in a very thin film which has undergone the MIT and is in an insulating state (see Figure 1). Local electrical properties were measured by means of Conductive Atomic Force Microscopy (C-AFM). In the case of very thin and initially insulating films, I/V curves presented an abrupt increase of the current intensity only for high enough sample voltage indicating a sharp transition into low resistance state (LRS). On the other hand, in the case of initially semimetallic films, this transition was less pronounced without clear threshold voltage for the switching into LRS (see Figure 2). As a result, such different behavior indicates that the MIT has indeed a high impact on the RS. Possible mechanisms of RS in both samples involving oxygen vacancies will be discusse |
| Databáze: | OpenAIRE |
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