Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios
| Autor: | Dogan, T., Verbeek, R., Kronemeijer, A.J., Bobbert, P.A., Gelinck, G.H., Wiel, W.G. van der |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Short-channel effect
Organic electronics Refractory metal compounds Electronic behaviors Polymer semiconductors Vertical organic field-effect transistors Transistors Large current density Gate electrodes Hardware_INTEGRATEDCIRCUITS Short-channel effects Organic field effect transistors ON/OFF current ratio Dielectric layer |
| Zdroj: | Advanced Electronic Materials |
| Popis: | A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm ?2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Databáze: | OpenAIRE |
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