Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs
| Autor: | Kolhatkar, J.S., Salm, Cora, Wallinga, Hans |
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| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 42-45 STARTPAGE=42;ENDPAGE=45;TITLE=Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 ISSUE=5;STARTPAGE=42;ENDPAGE=45;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 |
| Popis: | With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide. The low-frequency noise decreases, if the transistors are switched "off" periodically (switched biased conditions). In this work, we have studied both p-MOS and n-MOS devices. The small devices (W/L=10:0.3) have a few trapping states, which is proven by the Lorentzian nature of the power spectrum. The RTS were measured under both; constant biased and switched biased conditions. A clear change in the RTS parameters;the mean capture time (?c) and the mean emission time (?e), under switched biased conditions, has been observed, as compared to the values in the constant bias case. |
| Databáze: | OpenAIRE |
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