CoSi_2/Si(111) interface: Determination of the interfacial metal coordination number
| Autor: | Vrijmoeth, J., Zaima, S., Vlieg, E., Frenken, J.W.M. |
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| Jazyk: | angličtina |
| Rok vydání: | 1992 |
| Zdroj: | Physical Review B, 45(12), 6700-6708. AMER PHYSICAL SOC Physical Review B, 45(12), 6700-6708 |
| ISSN: | 0163-1829 |
| Popis: | The morphology and the surface and interface structure of flat CoSi2 films (thickness 2 Si-Co-Si triple layers) epitaxially grown on Si(111) have been investigated using medium-energy ion scattering with ultrahigh energy resolution. The data show that the silicide is attached to the substrate through Co-Si bonds rather than through Si-Si bonds. At the interface, the silicide is terminated by a full Si-Co-Si triple layer. The interface metal atoms are thus eightfold coordinated. The silicide-substrate distance is expanded by 0.16±0.08. The first Si substrate layer is relaxed outward by 0.08±0.08. The length of the Co-Si interface bond is thus dilated by 0.08. At the silicide surface, the first Co-Si interplanar distance is found to be relaxed inward by 0.14±0.04. Our measurements suggest that the silicide lattice strain is almost fully relaxed. We propose that such relaxation occurs through a high density of microcracks in the film. The average spacing between cracks is then smaller than roughly 50. |
| Databáze: | OpenAIRE |
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