Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)

, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in the surface state crossing the Fermi energy. Theoretical calculations show that these two effects are due to the existence of two structurally different kinds of Sn atoms that fluctuate at room temperature between two positions and are stabilized in a 3 x 3 structure at low temperature. -->
Popis souboru: application/pdf
Jazyk: English
Přístupová URL adresa: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::eda16e9bb8772be20aaf462b31f14de7
http://eprints.ucm.es/28618/
Rights: OPEN
Přírůstkové číslo: edsair.dedup.wf.001..eda16e9bb8772be20aaf462b31f14de7
Autor: Avila, J., Mascaraque, A., Michel, E. G., Asensio, M. C., Lelay, G., Ortega, J., Ruben Perez, Flores, F.
Jazyk: angličtina
Rok vydání: 1999
Předmět:
Zdroj: E-Prints Complutense. Archivo Institucional de la UCM
instname
ResearcherID
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Popis: The Sn/Ge(111) interface has been investigated across the 3 x 3 -->, root 3 x root 3 R30 degrees phase transition using core level and valence band photoemission spectroscopies. We find, both above and below the transition, two different components in the Sn 4d core level and a bond splitting in the surface state crossing the Fermi energy. Theoretical calculations show that these two effects are due to the existence of two structurally different kinds of Sn atoms that fluctuate at room temperature between two positions and are stabilized in a 3 x 3 structure at low temperature.
Databáze: OpenAIRE
Externí odkaz: