NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

Autor:	Henson, K., Collaert, N., Demand, M., Goodwin, M., Brus, S., Rooyackers, R., Ammel, A., Degroote, B., Ercken, M., Baerts, C., Anil, K. G., Dixit, A., Beckx, S., Schram, T., Deweerd, W., Boullart, W., Marc Schaekers, Gendt, S., Meyer, K., Yim, Y., Hooker, J. C., Jurczak, M., Biesemans, S.
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ed6ae90d581e112c0acb1dea9746905c http://www.scopus.com/inward/record.url?eid=2-s2.0-27144512245&partnerID=MN8TOARS Zobrazit plný text záznamu