Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Autor: Cuniot-Ponsard, Mireille, Saraswati, Irma, Ko, Suk-Min, Halbwax, Mathieu, Cho, Yong-Hoon, Dogheche, El Hadj
Přispěvatelé: Laboratoire Charles Fabry / Manolia, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Electrical Engineering, Faculty Engineering Universitas Indonesia, Department of Physics and Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Universitas Indonesia (UI )
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications
Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States
Popis: We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.
Databáze: OpenAIRE
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