A new fault detection technique for IGBT based on gate voltage monitoring
| Autor: | Rodríguez, Marco Antonio, Theilliol, Didier, Claudio, Abraham, Vela Valdés, Luis Gerardo |
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| Přispěvatelé: | Centro Nacional de Investigación y Desarrollo Tecnológico (CENIDET), Direction General Education National, Centre de Recherche en Automatique de Nancy (CRAN), Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS), Theilliol, Didier |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
[SPI.AUTO] Engineering Sciences [physics]/Automatic
[INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing [INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing Hardware_PERFORMANCEANDRELIABILITY [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing [SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing [SPI.AUTO]Engineering Sciences [physics]/Automatic |
| Zdroj: | 38th IEEE Power Electronics Specialists Conference, PESC 07 38th IEEE Power Electronics Specialists Conference, PESC 07, Jun 2007, Orlando, United States. pp.CDROM |
| Popis: | International audience; In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of a gate voltage signal measurement in a fault free and faulty case is presented to validate proposed technique. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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