Stability of vicinal surfaces: beyond the quasistatic approximation
| Autor: | GUIN, Laurent, Jabbour, Michel, BENOIT-MARECHAL, Lucas, Shaabani Ardali, Léopold, Triantafyllidis, Nicolas |
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| Přispěvatelé: | Laboratoire de mécanique des solides (LMS), École polytechnique (X)-MINES ParisTech - École nationale supérieure des mines de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'hydrodynamique (LadHyX), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), DAAA, ONERA, Université Paris Saclay [Meudon], ONERA-Université Paris-Saclay |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Physical Review Letters Physical Review Letters, American Physical Society, In press, 124 |
| ISSN: | 0031-9007 1079-7114 |
| Popis: | International audience; We revisit the step bunching instability without recourse to the quasistatic approximation and show thatthe stability diagrams are significantly altered, even in the low-deposition regime where it was thoughtsufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. Byaccounting for the dynamics and chemical effects, we can explain the onset of step bunching inSið111Þ-ð7 × 7Þ and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion.Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agreeswith the bunching regime observed at 750 °C in Si(111)-(7x7). |
| Databáze: | OpenAIRE |
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