Effect of Oxygen Addition in the Sputtering Gas on the Dielectric Properties of a-BaTiO3 Films

Autor: Jomni, Fathi, Gonon, Patrice, El Kamel, Fadhel, Yangui, Béchir
Přispěvatelé: Université de Tunis El Manar (UTM), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Garcia, Sylvie
Jazyk: angličtina
Rok vydání: 2008
Předmět:
Zdroj: Integrated Ferroelectrics
Integrated Ferroelectrics, Taylor & Francis, 2008, 97, pp 121
Integrated Ferroelectrics, 2008, 97, pp 121
ISSN: 1058-4587
Popis: International audience; Amorphous barium titanate films (a-BTO) were grown by the RF magnetron sputtering technique at low temperature and under various oxygen/argon mixing ratios (OMR). Their dielectric properties (dielectric constant, loss and ac conductivity in the 0.1-105 Hz range), dc leakage currents, and thermally stimulated currents were systematically studied as a function of OMR in the sputtering gas (0 to 20 %). We demonstrate that the presence of oxygen plays a significant role in improving the dielectric properties of a-BTO thin films. The oxygen incorporation successfully suppressed some electrical defects. The bulk conductivity and leakage currents are reduced although a small decrease of dielectric constant has been observed. Films prepared at higher oxygen ratio (20%) have a small leakage current density (3.6 × 10−7 A/m2) and lower tangent loss (2 × 10−3).
Databáze: OpenAIRE