Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications
| Autor: | Wei, Wei, Deokar, Geetanjali, Belhaj, Mohamed Moez, Mele, D., Pallecchi, Emiliano, Pichonat, Emmanuelle, Vignaud, Dominique, Happy, Henri |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, May 2014, Villeneuve d'Ascq, France. 4 p |
| Popis: | International audience; To synthesize monolayer graphene and realize defect free transfer for electronic devices application are still challenges. In this letter, we present the fabrication and characterization of graphene field effect transistor (GFET), with respect to key parameters of graphene growth on Cu by chemical vapor deposition (CVD) and an optimized transfer process. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality. It was found that monolayer graphene with a low defect density and hole mobility up to 3180cm2/Vs at n=1.3 10^12 cm-2, could be obtained. For device characterization, We report an intrinsic current gain cut-off frequency (ft) of 15.5 GHz and maximum oscillation frequency of 12 GHz, deduced from the S-parameters measurements for device with gate length of 100 nm. This study demonstrate the potential of CVD-grown graphene for high speed electronics in combination with a technological process compatible with arbitrary substrates. |
| Databáze: | OpenAIRE |
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