Intermediate Band Semiconductor Photovoltaic Solar Cell
| Autor: | Luque Lopez Antonio, Flores Sintas Fernando, Antonio Marti, Conesa Cegarra Jose Carlos, Wahnon Benarroch, Ortega Mateo Josear, Tablero Crespo Cesar, Perez Perez Ruben, Cuadra Rodrigez Lucas A |
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| Zdroj: | The Lens Digital.CSIC. Repositorio Institucional del CSIC instname |
| Popis: | Fecha de presentacion internacional:09.06.2000.- Titulares: Universidad Politecnica de Madrid.- Consejo Superior de Investigaciones Científicas (CSIC).- Universidad Autónoma de Madrid. The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, which is located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6, 7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to the improvement of photovoltaic devices. |
| Databáze: | OpenAIRE |
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