Analytical compact model for quantization in undoped double-gate metal oxide semiconductor field effect transistors and its impact on quasi-ballistic current

Autor:	Ferrier R. Clerc G. Pananakakis G. Ghibaudo F. Boeuf T. Skotnicki, M.
Přispěvatelé:	Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Ghibaudo, Gerard
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS
Zdroj:	Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2006, 45, pp.3088
Popis:	International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c92a6d630e926ca9fa101dd9d98a0ce9 https://hal.archives-ouvertes.fr/hal-00145092 Zobrazit plný text záznamu