| Autor: |
Wrachien, Nicola, Cester, Andrea, Wu, Yq, Ye, Pd, Zanoni, Enrico, Meneghesso, Gaudenzio |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Birck and NCN Publications |
| Popis: |
We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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