Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology
| Autor: | Agboton, Alain, Defrance, N., Altuntas, Philippe, Avramovic, Vanessa, Cutivet, Adrien, Ouhachi, Rezki, de Jaeger, Jean-Claude, Bouzid-Driad, Samira, Hassan, Maher, Renvoise, M., Frijlink, Peter |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), OMMIC |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Proceedings of 43rd European Solid-State Device Research Conference, ESSDERC 2013 43rd European Solid-State Device Research Conference, ESSDERC 2013 43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩ |
| DOI: | 10.1109/ESSDERC.2013.6818818⟩ |
| Popis: | A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the obtained transit delay contributions, the effective electron velocity is estimated to 0.85×107 cm.s-1. In addition, the effect of the image charge on the drain delay is experimentally demonstrated through the extraction of the mirroring coefficient α close to the predicted simulation value. |
| Databáze: | OpenAIRE |
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