On line monitoring of RF power amplifiers with embedded temperature sensors

Autor:	Altet Sanahujes, Josep|||0000-0002-6939-6475, Mateo Peña, Diego|||0000-0001-5996-9092, Gómez Salinas, Dídac
Přispěvatelé:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Předmět:	Power amplifiers Amplificadors (Electrònica)
Zdroj:	Recercat. Dipósit de la Recerca de Catalunya instname UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC)
Popis:	In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bccd2b532f7f36d509f0e305835a4d7d http://hdl.handle.net/2117/16657 Zobrazit plný text záznamu