Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET
| Autor: | Bordez, S., Cros, A., Rochereau, K., gerard ghibaudo |
|---|---|
| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Domenget, Chahla |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Solid-State Electronics Solid-State Electronics, Elsevier, 2009, 53 (2), pp.127-133 HAL |
| ISSN: | 0038-1101 |
| Popis: | International audience |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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