Isotopic Comparative Method (ICM) for the determination of variations of the useful ion yields in boron doped silicon as a function of oxygen concentration in the 0 - 10 at% range
| Autor: | Dupuy, J. C., Dubois, C., Prudon, G., Gautier, B., Kögler, R., Akhmadaliev, S., Perrat-Mabilon, A., Peaucelle, C. |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | SIMS XVII Toronto, Canada, 13.-17.09.2009, Toronto, Canada Surface and Interface Analysis 43(2010)1-2, 137-140 |
| Popis: | Specific samples containing O-18 and O-16 are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. O-18 and O-16 are used to implement an Isotopic Comparative Method (ICM) which allows to correct the matrix effects involved by the presence of a high concentration of oxygen in the sample: the near-flat profile of O-18, measured in the 'dilute', linear regime (weak concentration) is used to calculate the real concentration of O-16. The ion yields of B+, O+, Si+, O- and Si- are measured as a function of the oxygen concentration. For B+ ion yield, the variation is important whereas they are weak for Si-+/- and O-+/- ion yields for the range [0-12 at.%]. This ICM applied to oxygen in silicon can be considered as an interesting complementary method of previous 'O-16 implantation method' and of 'O-18 single marker method'. |
| Databáze: | OpenAIRE |
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