Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

Autor:	Ribes, G., Bruyère, S., Roy, D., Parthasarathy, C., Muller, M., Denais, M., Huard, V., Skotnicki, T., gerard ghibaudo
Přispěvatelé:	Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Ghibaudo, Gerard
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS
Zdroj:	IEEE Transactions on Device and Materials Reliability IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6, pp.132 HAL
ISSN:	1530-4388
Popis:	International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b9c5a437ce20aeb6ec513ba1f2bacfd8 https://hal.archives-ouvertes.fr/hal-00145108 Zobrazit plný text záznamu