| Autor: |
Chevalier, Florian, Brosselard, Pierre, Planson, Dominique, Bevilacqua, Pascal, Grosset, Grégory, Dupuy, Lionel |
| Přispěvatelé: |
Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Société IBS, Ion Beam Services (IBS), IBS-IBS |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
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| Popis: |
Based upon the characterization of two types of 4H-SiC JBS diodes compared to SiC Shottky diode, this paper prensents the influence of the p + activation and well-contacting on the electrical characteristics in forward and reverse mode. The papers will mainly focus on the forward current level, lower without p + activation than with a fully efficient p + layer, compared to state-of-the-art devices. The reverse leakage current is also determining, since it will be higher if there is only a Schottky barrier to protect the blocking mode. After discussing the static results, dynamic mea-surements will be performed to confirm the non-activation of some p + and analyzing its influence on switching mode. Finally, a dsetructive measurement of the surge current of each diode will complete the study. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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